Texas Instruments Single NexFET 1 Type N, Type N-Channel MOSFET, 100 A, 60 V Enhancement, 8-Pin VSONP CSD18563Q5A
- RS Stock No.:
- 168-4377
- Mfr. Part No.:
- CSD18563Q5A
- Manufacturer:
- Texas Instruments
Subtotal (1 reel of 2500 units)*
€1,295.00
(exc. VAT)
€1,592.50
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 + | €0.518 | €1,295.00 |
*price indicative
- RS Stock No.:
- 168-4377
- Mfr. Part No.:
- CSD18563Q5A
- Manufacturer:
- Texas Instruments
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Texas Instruments | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | VSONP | |
| Series | NexFET | |
| Mount Type | Surface, Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Power Dissipation Pd | 3.2W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.8V | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.8mm | |
| Width | 5 mm | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Texas Instruments | ||
Product Type MOSFET | ||
Channel Type Type N, Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type VSONP | ||
Series NexFET | ||
Mount Type Surface, Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Power Dissipation Pd 3.2W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.8V | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Length 5.8mm | ||
Width 5 mm | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY