Texas Instruments Single NexFET 1 Type N, Type N-Channel MOSFET, 259 A, 100 V Enhancement, 3-Pin TO-220 CSD19536KCS
- RS Stock No.:
- 121-9764
- Mfr. Part No.:
- CSD19536KCS
- Manufacturer:
- Texas Instruments
Bulk discount available
Subtotal (1 tube of 50 units)*
€131.65
(exc. VAT)
€161.95
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | €2.633 | €131.65 |
| 100 - 200 | €2.107 | €105.35 |
| 250 + | €1.993 | €99.65 |
*price indicative
- RS Stock No.:
- 121-9764
- Mfr. Part No.:
- CSD19536KCS
- Manufacturer:
- Texas Instruments
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Texas Instruments | |
| Channel Type | Type N, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 259A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | NexFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole, Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 375W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 118nC | |
| Forward Voltage Vf | -5V | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Width | 4.7 mm | |
| Height | 16.51mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Texas Instruments | ||
Channel Type Type N, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 259A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series NexFET | ||
Package Type TO-220 | ||
Mount Type Through Hole, Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 375W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 118nC | ||
Forward Voltage Vf -5V | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Width 4.7 mm | ||
Height 16.51mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY