Essential and Operational Technologies

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	343 A
	Maximum Drain Source Voltage	40 V
	Package Type	D2PAK (TO-263)
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	2 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.5V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	375 W
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	108 nC @ 4.5 V
	Length	10.67mm
	Width	4.83mm
	Maximum Operating Temperature	+175 °C
	Minimum Operating Temperature	-55 °C
	Height	9.65mm
	Forward Diode Voltage	1.3V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 343 A
	Maximum Drain Source Voltage 40 V
	Package Type D2PAK (TO-263)
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 2 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.5V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 375 W
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 108 nC @ 4.5 V
	Length 10.67mm
	Width 4.83mm
	Maximum Operating Temperature +175 °C
	Minimum Operating Temperature -55 °C
	Height 9.65mm
	Forward Diode Voltage 1.3V

Infineon HEXFET N-Channel MOSFET, 343 A, 40 V, 3-Pin D2PAK IRLS3034TRLPBF

N-Channel Power MOSFET 40V, Infineon

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