N-Channel MOSFET, 45 A, 1200 V, 3-Pin HiP247 STMicroelectronics SCT30N120

RS Stock No.:: 168-8966
Mfr. Part No.:: SCT30N120
Manufacturer:: STMicroelectronics

N-Channel MOSFET, 45 A, 1200 V, 3-Pin HiP247 STMicroelectronics SCT30N120

Price Each (In a Tube of 30)

€18.073

(exc. VAT)

€22.23

(inc. VAT)

500 In stock for delivery within 2 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Tube**
30 +	€18.073	€542.19

**price indicative

RS Stock No.:: 168-8966
Mfr. Part No.:: SCT30N120
Manufacturer:: STMicroelectronics

SCT30N120, Silicon Carbide Power MOSFET 45A, 1200V, 90mOhm N-Channel in HiP247
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	45 A
Maximum Drain Source Voltage	1200 V
Package Type	HiP247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	100 mΩ
Channel Mode	Enhancement
Maximum Power Dissipation	270 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-10 V, +25 V
Width	5.15mm
Length	15.75mm
Transistor Material	Si
Number of Elements per Chip	1
Maximum Operating Temperature	+200 °C
Typical Gate Charge @ Vgs	105 nC @ 20 V
Height	20.15mm
Forward Diode Voltage	3.5V
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 45 A, 1200 V, 3-Pin HiP247 STMicroelectronics SCT30N120

N-Channel Silicon Carbide (SiC) MOSFET, STMicroelectronics

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