N-Channel MOSFET, 45 A, 1200 V, 3-Pin HiP247 STMicroelectronics SCT30N120
- RS Stock No.:
- 907-4741
- Mfr. Part No.:
- SCT30N120
- Manufacturer:
- STMicroelectronics
Bulk discount available
Subtotal (1 unit)**
€23.16
(exc. VAT)
€28.49
(inc. VAT)
18 In stock for delivery within 2 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
Units | Per unit |
|---|---|
| 1 - 4 | €23.16 |
| 5 - 9 | €22.01 |
| 10 - 24 | €19.81 |
| 25 + | €19.69 |
**price indicative
- RS Stock No.:
- 907-4741
- Mfr. Part No.:
- SCT30N120
- Manufacturer:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 45 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | HiP247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 100 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 270 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -10 V, +25 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 105 nC @ 20 V | |
| Length | 15.75mm | |
| Maximum Operating Temperature | +200 °C | |
| Transistor Material | Si | |
| Width | 5.15mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 20.15mm | |
| Forward Diode Voltage | 3.5V | |
Select all | ||
|---|---|---|
Manufacturer STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 45 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type HiP247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 100 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 270 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -10 V, +25 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 105 nC @ 20 V | ||
Length 15.75mm | ||
Maximum Operating Temperature +200 °C | ||
Transistor Material Si | ||
Width 5.15mm | ||
Minimum Operating Temperature -55 °C | ||
Height 20.15mm | ||
Forward Diode Voltage 3.5V | ||
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