Infineon BSZ097N10NS5 Type N-Channel MOSFET, 40 A, 100 V Enhancement, 8-Pin TSDSON

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Subtotal (1 reel of 5000 units)*

€2,980.00

(exc. VAT)

€3,665.00

(inc. VAT)

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Units
Per unit
Per Reel*
5000 +€0.596€2,980.00

*price indicative

RS Stock No.:
170-2300
Mfr. Part No.:
BSZ097N10NS5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

100V

Series

BSZ097N10NS5

Package Type

TSDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

13mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

69W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

22nC

Maximum Operating Temperature

150°C

Height

1.1mm

Width

3.4 mm

Standards/Approvals

No

Length

3.4mm

Automotive Standard

No

OptiMOS™ 5 100V, Infineon’s latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS™ 5 100V MOSFETs offer the industry’s lowest R DS(on)

Optimized for synchronous rectification

Ideal for high switching frequency

Output capacitance reduction of up to 44%

R DS(on) reduction of up to 44%

Benefits:

Highest system efficiency

Reduced switching and conduction losses

Less paralleling required

Increased power density

Low voltage overshoot

Target Applications:

Telecom

Server

Solar

Low voltage drives

Light electric vehicles

Adapter

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