Vishay SiHB22N60EF Type N-Channel MOSFET, 19 A, 600 V Enhancement, 3-Pin TO-263

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Subtotal (1 tube of 50 units)*

€78.25

(exc. VAT)

€96.25

(inc. VAT)

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  • 1,000 unit(s) ready to ship from another location
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Units
Per unit
Per Tube*
50 - 50€1.565€78.25
100 - 200€1.346€67.30
250 +€1.266€63.30

*price indicative

RS Stock No.:
188-4872
Mfr. Part No.:
SIHB22N60EF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

19A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

SiHB22N60EF

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

182mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

179W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

48nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

9.65 mm

Height

4.57mm

Length

10.41mm

Automotive Standard

No

EF Series Power MOSFET With Fast Body Diode.

Low figure-of-merit (FOM) Ron x Qg

Low input capacitance (Ciss)

Reduced switching and conduction losses

APPLICATIONS

Server and telecom power supplies

Switch mode power supplies (SMPS)

Power factor correction power supplies (PFC)

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