MPN

Vishay SiHG22N60EF Type N-Channel MOSFET, 19 A, 600 V Enhancement, 3-Pin TO-247

RS Stock No.:: 188-4877
Mfr. Part No.:: SIHG22N60EF-GE3
Manufacturer:: Vishay

Vishay SiHG22N60EF Type N-Channel MOSFET, 19 A, 600 V Enhancement, 3-Pin TO-247

Bulk discount available

Subtotal (1 tube of 25 units)*

€76.375

(exc. VAT)

€93.95

(inc. VAT)

In Stock

Plus 425 unit(s) shipping from 05 January 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
25 - 25	€3.055	€76.38
50 - 100	€2.871	€71.78
125 +	€2.596	€64.90

*price indicative

RS Stock No.:: 188-4877
Mfr. Part No.:: SIHG22N60EF-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	19A
	Maximum Drain Source Voltage Vds	600V
	Series	SiHG22N60EF
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	182mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	179W
	Maximum Gate Source Voltage Vgs	30 V
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	48nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	15.87mm
	Width	5.31 mm
	Standards/Approvals	No
	Height	20.82mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 19A
	Maximum Drain Source Voltage Vds 600V
	Series SiHG22N60EF
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 182mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 179W
	Maximum Gate Source Voltage Vgs 30 V
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 48nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 15.87mm
	Width 5.31 mm
	Standards/Approvals No
	Height 20.82mm
	Automotive Standard No

Datasheet SIHG22N60EF-GE3

EF Series Power MOSFET With Fast Body Diode.

Low figure-of-merit (FOM) Ron x Qg

Low input capacitance (Ciss)

Reduced switching and conduction losses

APPLICATIONS

Server and telecom power supplies

Switch mode power supplies (SMPS)

Power factor correction power supplies (PFC)

Vishay SiHG22N60EF Type N-Channel MOSFET, 19 A, 600 V Enhancement, 3-Pin TO-247

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