Vishay SiHU4N80AE Type N-Channel MOSFET, 4.1 A, 800 V Enhancement, 3-Pin IPAK

Bulk discount available

Subtotal (1 tube of 75 units)*

€93.60

(exc. VAT)

€115.125

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 22 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
Per Tube*
75 - 75€1.248€93.60
150 - 300€0.936€70.20
375 +€0.774€58.05

*price indicative

RS Stock No.:
188-4879
Mfr. Part No.:
SIHU4N80AE-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.1A

Maximum Drain Source Voltage Vds

800V

Package Type

IPAK

Series

SiHU4N80AE

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.44Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

11nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

62.5W

Maximum Operating Temperature

150°C

Length

6.73mm

Height

6.22mm

Standards/Approvals

No

Automotive Standard

No

E Series Power MOSFET

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Ciss)

Reduced switching and conduction losses

APPLICATIONS

Server and telecom power supplies

Switch mode power supplies (SMPS)

Power factor correction power supplies (PFC)

Related links