STMicroelectronics SCT Type N-Channel MOSFET, 12 A, 1200 V Depletion, 3-Pin Hip-247 SCT10N120
- RS Stock No.:
- 202-5476
- Mfr. Part No.:
- SCT10N120
- Manufacturer:
- STMicroelectronics
Bulk discount available
Subtotal (1 unit)*
€7.88
(exc. VAT)
€9.69
(inc. VAT)
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Units | Per unit |
|---|---|
| 1 - 4 | €7.88 |
| 5 - 9 | €7.36 |
| 10 + | €7.18 |
*price indicative
- RS Stock No.:
- 202-5476
- Mfr. Part No.:
- SCT10N120
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Hip-247 | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.58Ω | |
| Channel Mode | Depletion | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 150W | |
| Forward Voltage Vf | 4.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 200°C | |
| Height | 34.95mm | |
| Length | 15.75mm | |
| Standards/Approvals | No | |
| Width | 5.15 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Hip-247 | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.58Ω | ||
Channel Mode Depletion | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 150W | ||
Forward Voltage Vf 4.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 200°C | ||
Height 34.95mm | ||
Length 15.75mm | ||
Standards/Approvals No | ||
Width 5.15 mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
Very fast and robust intrinsic body diode
Low capacitance
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