onsemi NVH Type N-Channel MOSFET, 17.3 A, 1200 V Enhancement, 4-Pin TO-247
- RS Stock No.:
- 202-5741
- Mfr. Part No.:
- NVH4L160N120SC1
- Manufacturer:
- onsemi
Subtotal (1 tube of 450 units)*
€3,047.85
(exc. VAT)
€3,748.95
(inc. VAT)
Stock information currently inaccessible
Units | Per unit | Per Tube* |
|---|---|---|
| 450 + | €6.773 | €3,047.85 |
*price indicative
- RS Stock No.:
- 202-5741
- Mfr. Part No.:
- NVH4L160N120SC1
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 17.3A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | NVH | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 111W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4V | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 22.74mm | |
| Standards/Approvals | AEC-Q101 and PPAP Capable | |
| Length | 15.8mm | |
| Width | 5.2 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 17.3A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series NVH | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 111W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4V | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Operating Temperature 175°C | ||
Height 22.74mm | ||
Standards/Approvals AEC-Q101 and PPAP Capable | ||
Length 15.8mm | ||
Width 5.2 mm | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247−4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 17.3 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.
AEC Q101 qualified
100% avalanche tested
Low effective output capacitance
RoHS compliant
Related links
- onsemi NVH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247 NVH4L160N120SC1
- onsemi NVH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NVH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NVH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NVH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NVH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247 NVH4L020N120SC1
- onsemi NVH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247 NVHL160N120SC1
- onsemi NVH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247 NVH4L080N120SC1