onsemi NVH Type N-Channel MOSFET, 17.3 A, 1200 V Enhancement, 4-Pin TO-247 NVH4L160N120SC1
- RS Stock No.:
- 202-5743
- Mfr. Part No.:
- NVH4L160N120SC1
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)*
€38.25
(exc. VAT)
€47.05
(inc. VAT)
Temporarily out of stock
- Shipping from 03 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | €7.65 | €38.25 |
| 50 + | €6.596 | €32.98 |
*price indicative
- RS Stock No.:
- 202-5743
- Mfr. Part No.:
- NVH4L160N120SC1
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17.3A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NVH | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4V | |
| Maximum Power Dissipation Pd | 111W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 and PPAP Capable | |
| Length | 15.8mm | |
| Width | 5.2 mm | |
| Height | 22.74mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17.3A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NVH | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4V | ||
Maximum Power Dissipation Pd 111W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 and PPAP Capable | ||
Length 15.8mm | ||
Width 5.2 mm | ||
Height 22.74mm | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247−4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 17.3 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.
AEC Q101 qualified
100% avalanche tested
Low effective output capacitance
RoHS compliant
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