Vishay SiSS52DN Type N-Channel MOSFET, 162 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SiSS52DN-T1-GE3

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Subtotal (1 pack of 10 units)*

€9.57

(exc. VAT)

€11.77

(inc. VAT)

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Per Pack*
10 - 90€0.957€9.57
100 - 240€0.938€9.38
250 - 490€0.736€7.36
500 - 990€0.67€6.70
1000 +€0.536€5.36

*price indicative

Packaging Options:
RS Stock No.:
210-5016
Mfr. Part No.:
SiSS52DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

162A

Maximum Drain Source Voltage Vds

30V

Series

SiSS52DN

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.95mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

57W

Typical Gate Charge Qg @ Vgs

43.2nC

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Height

0.83mm

Width

3.4 mm

Standards/Approvals

No

Length

3.4mm

Automotive Standard

No

The Vishay N-Channel 30 V (D-S) MOSFET has PowerPAK 1212-8S package type.

TrenchFET Gen V power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Enables higher power density with very low RDS(on) and thermally enhanced compact package

100 % Rg and UIS tested

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