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STMicroelectronics SCTL35N65G2V Type N-Channel MOSFET, 40 A, 650 V Enhancement, 4-Pin PowerFLAT SCTL35N65G2V

RS Stock No.:: 213-3942
Mfr. Part No.:: SCTL35N65G2V
Manufacturer:: STMicroelectronics

STMicroelectronics SCTL35N65G2V Type N-Channel MOSFET, 40 A, 650 V Enhancement, 4-Pin PowerFLAT SCTL35N65G2V

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Subtotal (1 unit)*

€14.05

(exc. VAT)

€17.28

(inc. VAT)

Temporarily out of stock

Shipping from 23 February 2027

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit
1 - 49	€14.05
50 - 99	€13.68
100 - 249	€13.33
250 +	€13.00

*price indicative

RS Stock No.:: 213-3942
Mfr. Part No.:: SCTL35N65G2V
Manufacturer:: STMicroelectronics

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	STMicroelectronics
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PowerFLAT
	Series	SCTL35N65G2V
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	67mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	22 V
	Maximum Power Dissipation Pd	417W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	3.3V
	Typical Gate Charge Qg @ Vgs	73nC
	Maximum Operating Temperature	175°C
	Height	0.95mm
	Width	8.1 mm
	Length	8.1mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand STMicroelectronics
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 650V
	Package Type PowerFLAT
	Series SCTL35N65G2V
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 67mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 22 V
	Maximum Power Dissipation Pd 417W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 3.3V
	Typical Gate Charge Qg @ Vgs 73nC
	Maximum Operating Temperature 175°C
	Height 0.95mm
	Width 8.1 mm
	Length 8.1mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - SCTL35N65G2V

The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.

Very fast and robust intrinsic body diode

Low capacitance

Source sensing pin for increased efficiency

STMicroelectronics SCTL35N65G2V Type N-Channel MOSFET, 40 A, 650 V Enhancement, 4-Pin PowerFLAT SCTL35N65G2V

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