Infineon OptiMOS Type N-Channel MOSFET, 180 A, 100 V N, 7-Pin TO-263
- RS Stock No.:
- 214-4363
- Mfr. Part No.:
- IPB017N10N5LFATMA1
- Manufacturer:
- Infineon
Subtotal (1 reel of 1000 units)*
€2,655.00
(exc. VAT)
€3,266.00
(inc. VAT)
In Stock
- 1,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | €2.655 | €2,655.00 |
*price indicative
- RS Stock No.:
- 214-4363
- Mfr. Part No.:
- IPB017N10N5LFATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 195nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 313W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.57mm | |
| Length | 10.31mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 195nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 313W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 4.57mm | ||
Length 10.31mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon OptiMOS Series MOSFET, 100V Maximum Drain Source Voltage, 180A Maximum Continuous Drain Current - IPB017N10N5LFATMA1
This MOSFET is a high-current N-channel switching transistor designed for demanding power applications. It operates across a wide temperature range and is supplied in a surface-mount TO-263 package for integration onto compact assemblies. The device is intended for use where efficient conduction and robust switching are required in 100V-class systems.
Features and Benefits:
• 1.7mΩ Rds(on) enabling low conduction losses and higher efficiency
• 180A continuous drain current supporting heavy load currents
• 100V drain-source rating for high-voltage switching applications
• 313W power dissipation allowing sustained thermal load handling
• 195nC typical gate charge facilitating controlled gate-drive dynamics
• 20V gate tolerance permitting flexible gate-drive voltages
• 180A continuous drain current supporting heavy load currents
• 100V drain-source rating for high-voltage switching applications
• 313W power dissipation allowing sustained thermal load handling
• 195nC typical gate charge facilitating controlled gate-drive dynamics
• 20V gate tolerance permitting flexible gate-drive voltages
Applications
• Suitable for DC-DC converters in industrial power supplies
• Ideal for high-current synchronous rectification stages
• Used with motor drives requiring robust switching elements
• Can be used for power distribution in telecom equipment
• Appropriate for server power modules and datacentre supplies
• Ideal for high-current synchronous rectification stages
• Used with motor drives requiring robust switching elements
• Can be used for power distribution in telecom equipment
• Appropriate for server power modules and datacentre supplies
What temperature range can it tolerate in operation?
It functions from -55°C up to 150°C, covering extended industrial and embedded environments.
What package should designers account for when laying out PCBs?
It is supplied in a TO-263 surface-mount package requiring thermal land patterns for effective heat dissipation.
How many pins does the device provide for connection?
The component has seven pins to accommodate power and gate connections along with package anchors.
What type of channel does it use and how does that affect circuit design?
It is an N-channel device, which is typical for low-side switching and synchronous rectifier configurations.
Related links
- Infineon OptiMOS Type N-Channel MOSFET 100 V N, 7-Pin TO-263 IPB017N10N5LFATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET 150 V N, 7-Pin TO-263
- Infineon OptiMOS 5 Type N-Channel MOSFET 150 V N, 7-Pin TO-263 IPB044N15N5ATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V Enhancement, 7-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 7-Pin TO-263
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V Enhancement, 7-Pin TO-263 IPB024N10N5ATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 7-Pin TO-263 IPB025N10N3GATMA1
- Infineon IMBG Type N-Channel MOSFET 75 V N, 7-Pin TO-263
