Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 26 A, 600 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 1000 units)*

€1,347.00

(exc. VAT)

€1,657.00

(inc. VAT)

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Per Reel*
1000 +€1.347€1,347.00

*price indicative

RS Stock No.:
214-4367
Mfr. Part No.:
IPB60R120P7ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

26A

Maximum Drain Source Voltage Vds

600V

Series

600V CoolMOS P7

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

120mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

95W

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

36nC

Maximum Operating Temperature

150°C

Height

4.5mm

Length

10.02mm

Width

9.27 mm

Standards/Approvals

No

Automotive Standard

No

This Infineon 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.

It has rugged body diode

Integrated RG reduces MOSFET oscillation sensitivity

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