Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-263 IPB60R360P7ATMA1

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€5.08

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€6.25

(inc. VAT)

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10 - 40€0.508€5.08
50 - 90€0.482€4.82
100 - 240€0.473€4.73
250 - 490€0.442€4.42
500 +€0.412€4.12

*price indicative

Packaging Options:
RS Stock No.:
214-4372
Mfr. Part No.:
IPB60R360P7ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

600V CoolMOS P7

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

360mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

13nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.9V

Maximum Power Dissipation Pd

41W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Length

10.02mm

Standards/Approvals

No

Width

9.27 mm

Height

4.5mm

Automotive Standard

No

This Infineon 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.

It has rugged body diode

Integrated RG reduces MOSFET oscillation sensitivity

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