Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-252 IPD60R360P7ATMA1

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Subtotal (1 pack of 15 units)*

€9.795

(exc. VAT)

€12.045

(inc. VAT)

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15 +€0.653€9.80

*price indicative

Packaging Options:
RS Stock No.:
214-4388
Mfr. Part No.:
IPD60R360P7ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

600V

Series

600V CoolMOS P7

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

360mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

13nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.9V

Maximum Power Dissipation Pd

41W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.65mm

Height

2.35mm

Width

6.42 mm

Automotive Standard

No

This Infineon 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.

It has rugged body diode

Integrated RG reduces MOSFET oscillation sensitivity

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