Infineon HEXFET N-Channel MOSFET, 42 A, 55 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 215-2606
- Mfr. Part No.:
- IRLR2905TRLPBF
- Manufacturer:
- Infineon
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 215-2606
- Mfr. Part No.:
- IRLR2905TRLPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Series | HEXFET | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 42 A | |
| Maximum Drain Source Voltage (Vds) | 55 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | TO-252 | |
| Automotive Standard | No | |
| Forward Voltage (Vf) | 1.3 V | |
| Maximum Drain Source Resistance (Rds) | 27 mΩ | |
| Maximum Gate Source Voltage (Vgs) | 20 V | |
| Maximum Operating Temperature | 175 °C | |
| Maximum Power Dissipation (Pd) | 110 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface | |
| Standards/Approvals | EIA-481, EIA-541 | |
| Typical Gate Charge (Qg) @ Vgs | 48 nC | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Series HEXFET | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 42 A | ||
Maximum Drain Source Voltage (Vds) 55 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type TO-252 | ||
Automotive Standard No | ||
Forward Voltage (Vf) 1.3 V | ||
Maximum Drain Source Resistance (Rds) 27 mΩ | ||
Maximum Gate Source Voltage (Vgs) 20 V | ||
Maximum Operating Temperature 175 °C | ||
Maximum Power Dissipation (Pd) 110 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface | ||
Standards/Approvals EIA-481, EIA-541 | ||
Typical Gate Charge (Qg) @ Vgs 48 nC | ||
The Infineon HEXFET Power MOSFET series has 55V maximum drain source voltage it is a single N-Channel HEXFET Power MOSFET in a D-Pak package type. The Infineon series fifth generation HEXFET from International rectifier utilize advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-pack is designed for surface mounting using vapour phase, infrared or wave soldering technique.
Advanced Process Technology
Ultra Low On-Resistance
Lead-Free
Fully avalanche rated
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