Infineon CoolMOS Type N-Channel MOSFET, 8.5 A, 700 V N, 3-Pin TO-220 IPAN70R600P7SXKSA1
- RS Stock No.:
- 217-2502
- Mfr. Part No.:
- IPAN70R600P7SXKSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 20 units)*
€6.06
(exc. VAT)
€7.46
(inc. VAT)
In Stock
- Plus 400 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | €0.303 | €6.06 |
| 100 - 180 | €0.237 | €4.74 |
| 200 - 480 | €0.221 | €4.42 |
| 500 - 980 | €0.206 | €4.12 |
| 1000 + | €0.191 | €3.82 |
*price indicative
- RS Stock No.:
- 217-2502
- Mfr. Part No.:
- IPAN70R600P7SXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8.5A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | CoolMOS | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 20.5nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 82W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.1mm | |
| Standards/Approvals | No | |
| Height | 29.87mm | |
| Width | 4.8 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8.5A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series CoolMOS | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 20.5nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 82W | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Length 16.1mm | ||
Standards/Approvals No | ||
Height 29.87mm | ||
Width 4.8 mm | ||
Automotive Standard No | ||
The Infineon 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of: Efficiency and thermals Ease-of-use EMI behaviour.
Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off
Highly performant technology
Low switching losses (E oss)
Highly efficient
Excellent thermal behaviour
Allowing high speed switching
Integrated protection Zener diode
Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V
Finely graduated portfolio
Related links
- Infineon CoolMOS™ N-Channel MOSFET 700 V, 3-Pin TO-220 FP IPAN70R600P7SXKSA1
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- Infineon CoolMOS™ Silicon N-Channel MOSFET 700 V, 3-Pin IPAK IPSA70R600P7SAKMA1
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- Infineon CoolMOS™ P7 N-Channel MOSFET 700 V, 3-Pin TO-220 FP IPAN70R900P7SXKSA1
- Infineon CoolMOS™ Silicon N-Channel MOSFET 700 V, 3-Pin TO-220 FP IPA70R900P7SXKSA1
