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Infineon CoolMOS P7 Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-247

RS Stock No.:: 217-2586
Mfr. Part No.:: IPW60R120P7XKSA1
Manufacturer:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-247

Bulk discount available

Subtotal (1 tube of 30 units)*

€103.71

(exc. VAT)

€127.56

(inc. VAT)

In Stock

Plus 1,020 unit(s) shipping from 05 January 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
30 - 30	€3.457	€103.71
60 - 120	€3.284	€98.52
150 +	€3.146	€94.38

*price indicative

RS Stock No.:: 217-2586
Mfr. Part No.:: IPW60R120P7XKSA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	29A
	Maximum Drain Source Voltage Vds	600V
	Series	CoolMOS P7
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	120mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	36nC
	Forward Voltage Vf	0.9V
	Maximum Power Dissipation Pd	95W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Height	41.42mm
	Width	5.21 mm
	Standards/Approvals	No
	Length	6.13mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 29A
	Maximum Drain Source Voltage Vds 600V
	Series CoolMOS P7
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 120mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 36nC
	Forward Voltage Vf 0.9V
	Maximum Power Dissipation Pd 95W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Height 41.42mm
	Width 5.21 mm
	Standards/Approvals No
	Length 6.13mm
	Automotive Standard No

Datasheet - IPW60R120P7XKSA1

The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor R G

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

Infineon CoolMOS P7 Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-247

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