MPN

Infineon HEXFET Type N-Channel MOSFET, 170 A, 75 V, 3-Pin TO-252

RS Stock No.:: 217-2628
Mfr. Part No.:: IRFS3207TRLPBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 170 A, 75 V, 3-Pin TO-252

Subtotal (1 reel of 800 units)*

€1,065.60

(exc. VAT)

€1,310.40

(inc. VAT)

Stock information currently inaccessible - Please check back later

Units	Per unit	Per Reel*
800 +	€1.332	€1,065.60

*price indicative

RS Stock No.:: 217-2628
Mfr. Part No.:: IRFS3207TRLPBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	170A
	Maximum Drain Source Voltage Vds	75V
	Series	HEXFET
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	4.5mΩ
	Maximum Power Dissipation Pd	300W
	Typical Gate Charge Qg @ Vgs	260nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Height	9.65mm
	Length	10.67mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 170A
	Maximum Drain Source Voltage Vds 75V
	Series HEXFET
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 4.5mΩ
	Maximum Power Dissipation Pd 300W
	Typical Gate Charge Qg @ Vgs 260nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Height 9.65mm
	Length 10.67mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IRFS3207TRLPBF

The Infineon 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package.

Improved Gate Avalanche and Dynamic dV/dt Ruggedness

Fully Characterized Capacitance and Avalanche SOA

Enhanced body diode dV/dt and dI/dt Capability

Lead-Free

Infineon HEXFET Type N-Channel MOSFET, 170 A, 75 V, 3-Pin TO-252

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