Infineon HEXFET Type N-Channel MOSFET, 23 A, 30 V TO-252

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Subtotal (1 reel of 2000 units)*

€402.00

(exc. VAT)

€494.00

(inc. VAT)

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Units
Per unit
Per Reel*
2000 - 2000€0.201€402.00
4000 +€0.191€382.00

*price indicative

RS Stock No.:
218-3127
Mfr. Part No.:
IRLR2703TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

23A

Maximum Drain Source Voltage Vds

30V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

65mΩ

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

341W

Typical Gate Charge Qg @ Vgs

162nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Height

20.7mm

Length

15.87mm

Width

5.31 mm

Standards/Approvals

No

Automotive Standard

No

The Infineon HEXFET series N-channel power MOSFET. It utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This MOSFET is designed for surface mounting using vapour phase, infrared, or wave soldering techniques.

Ultra Low On-Resistance

Fast Switching

Fully Avalanche Rated

Lead free

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