Infineon CoolMOS Type N-Channel MOSFET, 9 A, 650 V Enhancement, 3-Pin TO-252 IPD60R280CFD7ATMA1

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Subtotal (1 pack of 10 units)*

€11.80

(exc. VAT)

€14.50

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40€1.18€11.80
50 - 90€1.121€11.21
100 - 240€1.074€10.74
250 - 490€1.027€10.27
500 +€0.956€9.56

*price indicative

Packaging Options:
RS Stock No.:
222-4671
Mfr. Part No.:
IPD60R280CFD7ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

280mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

51W

Typical Gate Charge Qg @ Vgs

18nC

Maximum Gate Source Voltage Vgs

20 V

Length

6.73mm

Width

6.22 mm

Height

2.41mm

Standards/Approvals

No

Automotive Standard

No

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Green Product (RoHS compliant)

MSL1 up to 260°C peak reflow AEC Q101 qualified

OptiMOS™ - power MOSFET for automotive applications

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