Vishay TrenchFET Type N-Channel MOSFET, 113 A, 45 V Enhancement, 4-Pin SO-8 SiJ450DP-T1-GE3

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Subtotal (1 pack of 5 units)*

€6.30

(exc. VAT)

€7.75

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45€1.26€6.30
50 - 120€1.132€5.66
125 - 245€0.946€4.73
250 - 495€0.88€4.40
500 +€0.58€2.90

*price indicative

Packaging Options:
RS Stock No.:
228-2887
Mfr. Part No.:
SiJ450DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

113A

Maximum Drain Source Voltage Vds

45V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

1.9mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

48W

Typical Gate Charge Qg @ Vgs

75.5nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 45 V MOSFET.

100 % Rg and UIS tested

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