Vishay TrenchFET Type N-Channel MOSFET, 81.2 A, 40 V Enhancement, 4-Pin SO-8 SIJA74DP-T1-GE3
- RS Stock No.:
- 228-2892
- Mfr. Part No.:
- SIJA74DP-T1-GE3
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 pack of 10 units)*
€7.66
(exc. VAT)
€9.42
(inc. VAT)
In Stock
- 6,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | €0.766 | €7.66 |
| 100 - 240 | €0.727 | €7.27 |
| 250 - 490 | €0.575 | €5.75 |
| 500 - 990 | €0.536 | €5.36 |
| 1000 + | €0.421 | €4.21 |
*price indicative
- RS Stock No.:
- 228-2892
- Mfr. Part No.:
- SIJA74DP-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 81.2A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 3.99mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 46.2W | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 81.2A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 3.99mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 46.2W | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay TrenchFET N-channel is 40 V MOSFET.
100 % Rg and UIS tested
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