Vishay TrenchFET Type N-Channel MOSFET, 70.6 A, 80 V Enhancement, 8-Pin SO-8 SiR880BDP-T1-RE3

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Subtotal (1 pack of 10 units)*

€11.16

(exc. VAT)

€13.73

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 90€1.116€11.16
100 - 240€1.05€10.50
250 - 490€0.949€9.49
500 - 990€0.893€8.93
1000 +€0.838€8.38

*price indicative

Packaging Options:
RS Stock No.:
228-2914
Mfr. Part No.:
SiR880BDP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

70.6A

Maximum Drain Source Voltage Vds

80V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

71.4W

Typical Gate Charge Qg @ Vgs

43.5nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 80 V MOSFET.

100 % Rg and UIS tested

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