Vishay TrenchFET Type N-Channel MOSFET, 335 A, 25 V Enhancement, 8-Pin SO-8 SIRA20BDP-T1-GE3

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Subtotal (1 pack of 5 units)*

€9.72

(exc. VAT)

€11.955

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45€1.944€9.72
50 - 120€1.752€8.76
125 - 245€1.364€6.82
250 - 495€1.208€6.04
500 +€1.108€5.54

*price indicative

Packaging Options:
RS Stock No.:
228-2916
Mfr. Part No.:
SIRA20BDP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

335A

Maximum Drain Source Voltage Vds

25V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.58mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

104W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

124nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 25 V MOSFET.

100 % Rg and UIS tested

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