ROHM N-Channel MOSFET, 1.6 A, 800 V Enhancement, 3-Pin TO-220FM R8002KNXC7G
- RS Stock No.:
- 235-2697
- Mfr. Part No.:
- R8002KNXC7G
- Manufacturer:
- ROHM
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 235-2697
- Mfr. Part No.:
- R8002KNXC7G
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 1.6 A | |
| Maximum Drain Source Voltage (Vds) | 800 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | TO-220FM | |
| Automotive Standard | No | |
| Height | 29.87 mm | |
| Length | 10.3 mm | |
| Maximum Drain Source Resistance (Rds) | 4.2 Ω | |
| Maximum Gate Source Voltage (Vgs) | 20 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 28 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Through Hole | |
| Standards/Approvals | No | |
| Typical Gate Charge (Qg) @ Vgs | 7.5 nC | |
| Width | 5 mm | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 1.6 A | ||
Maximum Drain Source Voltage (Vds) 800 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type TO-220FM | ||
Automotive Standard No | ||
Height 29.87 mm | ||
Length 10.3 mm | ||
Maximum Drain Source Resistance (Rds) 4.2 Ω | ||
Maximum Gate Source Voltage (Vgs) 20 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 28 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Through Hole | ||
Standards/Approvals No | ||
Typical Gate Charge (Qg) @ Vgs 7.5 nC | ||
Width 5 mm | ||
The ROHM R8xxxKNx series are high-speed switching products, super Junction MOSFET, that place an emphasis on high efficiency. It achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.
Low on-resistance
Ultra fast switching speed
Parallel use is easy
Pb-free plating
RoHS compliant
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