Vishay EF Type N-Channel MOSFET, 7 A, 850 V Depletion, 3-Pin TO-220 SIHA21N80AEF-GE3
- RS Stock No.:
- 239-8625
- Mfr. Part No.:
- SIHA21N80AEF-GE3
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 pack of 2 units)*
€7.45
(exc. VAT)
€9.164
(inc. VAT)
Last RS stock
- Final 50 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | €3.725 | €7.45 |
| 20 - 98 | €3.49 | €6.98 |
| 100 - 198 | €3.17 | €6.34 |
| 200 - 498 | €2.98 | €5.96 |
| 500 + | €2.795 | €5.59 |
*price indicative
- RS Stock No.:
- 239-8625
- Mfr. Part No.:
- SIHA21N80AEF-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Package Type | TO-220 | |
| Series | EF | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.22Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 47nC | |
| Maximum Power Dissipation Pd | 33W | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 850V | ||
Package Type TO-220 | ||
Series EF | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.22Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 47nC | ||
Maximum Power Dissipation Pd 33W | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay E series is power MOSFET With fast body Diode. This MOSFET used for server and telecom power supply, welding, and motor drives.
Low figure-of-merit
Low effective capacitance
Low switching and conduction losses
Related links
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