Vishay SQJQ184ER Type N-Channel MOSFET, 430 A, 80 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ184ER-T1_GE3

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Subtotal (1 pack of 2 units)*

€8.48

(exc. VAT)

€10.44

(inc. VAT)

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2 - 18€4.24€8.48
20 - 48€3.985€7.97
50 - 98€3.605€7.21
100 - 198€3.39€6.78
200 +€3.18€6.36

*price indicative

Packaging Options:
RS Stock No.:
252-0309
Mfr. Part No.:
SQJQ184ER-T1_GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

430A

Maximum Drain Source Voltage Vds

80V

Series

SQJQ184ER

Package Type

PowerPAK (8x8LR)

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0014mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

214W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

43nC

Forward Voltage Vf

1.1V

Maximum Operating Temperature

175°C

Height

1.9mm

Width

4.9 mm

Standards/Approvals

AEC-Q101

Length

6.15mm

Automotive Standard

AEC-Q101

The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages.

TrenchFET power MOSFET

AEC-Q101 qualified

100 % Rg and UIS tested

Thin 1.9 mm height

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