Vishay SI8824EDB Type N-Channel MOSFET, 2.1 A, 20 V, 4-Pin MICRO FOOT SI8824EDB-T2-E1

RS Stock No.:: 256-7398
Mfr. Part No.:: SI8824EDB-T2-E1
Manufacturer:: Vishay

Vishay SI8824EDB Type N-Channel MOSFET, 2.1 A, 20 V, 4-Pin MICRO FOOT SI8824EDB-T2-E1

Subtotal (1 reel of 3000 units)*

€390.00

(exc. VAT)

€480.00

(inc. VAT)

Temporarily out of stock

Shipping from 11 December 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
3000 +	€0.13	€390.00

*price indicative

RS Stock No.:: 256-7398
Mfr. Part No.:: SI8824EDB-T2-E1
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	2.1A
	Maximum Drain Source Voltage Vds	20V
	Series	SI8824EDB
	Package Type	MICRO FOOT
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	0.175Ω
	Maximum Gate Source Voltage Vgs	5V
	Typical Gate Charge Qg @ Vgs	2.7nC
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	0.9W
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Height	0.402mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 2.1A
	Maximum Drain Source Voltage Vds 20V
	Series SI8824EDB
	Package Type MICRO FOOT
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 0.175Ω
	Maximum Gate Source Voltage Vgs 5V
	Typical Gate Charge Qg @ Vgs 2.7nC
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 0.9W
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Height 0.402mm
	Automotive Standard No

Datasheet - SI8824EDB-T2-E1

Vishay SI8824EDB Series MOSFET, 20V Maximum Drain Source Voltage, 2.1A Maximum Continuous Drain Current - SI8824EDB-T2-E1

This n-channel MOSFET is a compact surface-mount switching transistor designed for low-voltage power management and fast switching tasks. It operates within extreme ambient ranges and is intended for use where a small footprint and logic-level gate drive are required. The device complies with RoHS and is supplied in a MICRO FOOT package suitable for high-density assemblies.

Features and Benefits:

• Low on-resistance 0.175Ω enables reduced conduction losses
• Continuous drain current 2.1A supports moderate load currents
• Gate threshold tuned for Vgs 5V logic-level compatibility
• Typical gate charge 2.7nC for rapid switching performance
• Maximum power dissipation 0.9W manages thermal load in compact layouts
• Forward voltage 1.2V aids in predicting conduction drop

Applications

• Suitable for battery-powered DC-DC converters in compact designs
• Ideal for high-density power distribution on SMD assemblies
• Used with microcontrollers requiring Vgs 5V switching
• Can be used for low-voltage motor drivers and load switches
• Appropriate for signal-level power control in consumer electronics

What thermal extremes can the device endure in operation?

It is rated to operate from -55°C up to +150°C, allowing use in demanding temperature environments.

How does the package affect board layout considerations?

The MICRO FOOT surface-mount format minimises vertical and lateral space, facilitating tight component placement and low-profile assemblies.

What electrical limit should designers observe for drain-source voltage?

The maximum drain-source voltage is 20V, so designs must keep system voltages below this threshold.

How does switching behaviour influence gate drive selection?

With a typical gate charge of 2.7nC, gate drivers must supply sufficient current for the desired edge rates without excessive losses.