Infineon HEXFET N-Channel MOSFET, 57 A, 100 V Enhancement SO-8 IRF6644TRPBF
- RS Stock No.:
- 257-9296
- Mfr. Part No.:
- IRF6644TRPBF
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
€6.43
(exc. VAT)
€7.91
(inc. VAT)
In Stock
- 4,470 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | €3.215 | €6.43 |
| 20 - 48 | €2.83 | €5.66 |
| 50 - 98 | €2.665 | €5.33 |
| 100 - 198 | €2.48 | €4.96 |
| 200 + | €1.765 | €3.53 |
*price indicative
- RS Stock No.:
- 257-9296
- Mfr. Part No.:
- IRF6644TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 57A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 89W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 57A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 89W | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRF series is the strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
High current rating
Dual side cooling capability
Low package height of 0.7mm
Low parasitic (1 to 2 nH) inductance package
100 percent lead free (No RoHS exemption)
Related links
- Infineon HEXFET N-Channel MOSFET 100 V SO-8
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin TO-263
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin TO-263 IRF3710STRLPBF
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRF3710PBF
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-247
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-247 IRFP3710PBF
- Infineon HEXFET N-Channel MOSFET 250 V Enhancement, 3-Pin TO-247