Infineon Dual N Channel Logic Level Enhancement Mode IPG20N06S4L-11 Type N-Channel MOSFET, 20 A, 60 V TDSON

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€3.07

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€3.776

(inc. VAT)

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2 - 8€1.535€3.07
10 - 98€1.375€2.75
100 - 248€1.325€2.65
250 - 498€1.13€2.26
500 +€1.04€2.08

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Packaging Options:
RS Stock No.:
258-3879
Mfr. Part No.:
IPG20N06S4L11ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

60V

Series

IPG20N06S4L-11

Package Type

TDSON

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

65W

Typical Gate Charge Qg @ Vgs

53nC

Maximum Gate Source Voltage Vgs

±16 V

Transistor Configuration

Dual N Channel Logic Level Enhancement Mode

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

AEC-Q101

The Infineon OptiMOS T2 power-transistor is dual Super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction. Exposed pad provides excellent thermal transfer, two N-Channel MOSFETs in one package with 2 isolated lead frames.

Dual N-channel Logic Level - Enhancement mode

AEC Q101 qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

Green Product (RoHS compliant)

100% Avalanche tested

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