Infineon IPW Type N-Channel MOSFET, 69 A, 650 V, 3-Pin PG-TO-247 IPW65R029CFD7XKSA1

RS Stock No.:: 258-3911
Mfr. Part No.:: IPW65R029CFD7XKSA1
Manufacturer:: Infineon

Infineon IPW Type N-Channel MOSFET, 69 A, 650 V, 3-Pin PG-TO-247 IPW65R029CFD7XKSA1

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Subtotal (1 unit)*

€9.15

(exc. VAT)

€11.25

(inc. VAT)

In Stock

16 unit(s) ready to ship from another location

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Units	Per unit
1 - 4	€9.15
5 - 9	€8.68
10 - 24	€8.50
25 - 49	€7.97
50 +	€7.40

*price indicative

RS Stock No.:: 258-3911
Mfr. Part No.:: IPW65R029CFD7XKSA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	69A
	Maximum Drain Source Voltage Vds	650V
	Series	IPW
	Package Type	PG-TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	29mΩ
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	305W
	Typical Gate Charge Qg @ Vgs	145nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 69A
	Maximum Drain Source Voltage Vds 650V
	Series IPW
	Package Type PG-TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 29mΩ
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 305W
	Typical Gate Charge Qg @ Vgs 145nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IPW65R029CFD7XKSA1

The Infineon 650V CoolMOS CFD7 super junction MOSFET in TO-247 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behaviour, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.

650V breakdown voltage

Significantly reduced switching losses compared to competition

Lowest RDS(on) dependency over temperature

Excellent hard-commutation ruggedness

Extra safety margin for designs with increased bus voltage

Enabling increased power density

Infineon IPW Type N-Channel MOSFET, 69 A, 650 V, 3-Pin PG-TO-247 IPW65R029CFD7XKSA1

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