Infineon HEXFET N-Channel MOSFET, 182 A, 200 V, 3-Pin TO-247AC IRF200P222

Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
Packaging Options:
RS Stock No.:
258-3959
Mfr. Part No.:
IRF200P222
Manufacturer:
Infineon
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Brand

Infineon

Series

HEXFET

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current (Id)

182 A

Maximum Drain Source Voltage (Vds)

200 V

Pin Count

3

Package Type

TO-247AC

Automotive Standard

No

Forward Voltage (Vf)

1.2 V

Maximum Drain Source Resistance (Rds)

6.6 mΩ

Maximum Gate Source Voltage (Vgs)

20 V

Maximum Operating Temperature

175 °C

Maximum Power Dissipation (Pd)

556 W

Minimum Operating Temperature

-55 °C

Mount Type

Surface, Through Hole

Standards/Approvals

RoHS

Typical Gate Charge (Qg) @ Vgs

135 nC

The Infineon MOSFET StrongIRFET is improved gate, avalanche and dynamic dv/dt ruggedness, it is fully characterized capacitance and avalanche SOA.

Enhanced body diode dv/dt and di/dt capability

Lead-free, RoHS compliant

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