Essential and Operational Technologies

These cookies make our website work. This includes product images and videos, functionality for the basket, logging in, remembering your username, registration and My Account.

We use optimisation cookies to test new features and designs on our website. The information collected helps us improve our website and our customers' experience.

Advertising

These cookies are used to understand the performance and relevancy of our adverts, to provide you with personalised adverts on other websites and social media, to track when you have arrived at our site from a recognised third-party affiliate website, and to track if you made a purchase based on the adverts we displayed to you.

Recommendations

These cookies enable us to provide personalised product and content recommendations, to make the browsing experience more relevant to you.

Functionality

These cookies are used to offer customer surveys and feedback, to improve search results, and to allow you to share content from our website on social media.

Analytics

These cookies help us improve our website by collecting and reporting information on how you use it.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	190 A
	Maximum Drain Source Voltage	60 V
	Package Type	PG-TO263-3
	Mounting Type	Surface Mount
	Pin Count	3
	Channel Mode	Enhancement
	Number of Elements per Chip	2
	Transistor Material	SiC

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 190 A
	Maximum Drain Source Voltage 60 V
	Package Type PG-TO263-3
	Mounting Type Surface Mount
	Pin Count 3
	Channel Mode Enhancement
	Number of Elements per Chip 2
	Transistor Material SiC

Infineon Dual SiC N-Channel MOSFET, 190 A, 60 V, 3-Pin PG-TO263-3 IPB013N06NF2SATMA1

Related links