Vishay SIJH Type N-Channel MOSFET, 277 A, 100 V Enhancement, 4-Pin 8x8L SIJH5100E-T1-GE3

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€6.54

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€8.04

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1 - 49€6.54
50 - 99€6.42
100 - 249€5.89
250 - 999€5.78
1000 +€5.66

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Packaging Options:
RS Stock No.:
279-9938
Mfr. Part No.:
SIJH5100E-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

277A

Maximum Drain Source Voltage Vds

100V

Series

SIJH

Package Type

8x8L

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.00189Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

128nC

Maximum Power Dissipation Pd

333W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

7.9mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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