Vishay SISD Type N-Channel MOSFET, 198 A, 30 V Enhancement, 8-Pin 1212-F SISD5300DN-T1-GE3

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 4 units)*

€9.32

(exc. VAT)

€11.48

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 6,000 unit(s) shipping from 20 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
Per Pack*
4 - 56€2.33€9.32
60 - 96€1.753€7.01
100 - 236€1.55€6.20
240 - 996€1.525€6.10
1000 +€1.49€5.96

*price indicative

Packaging Options:
RS Stock No.:
279-9979
Mfr. Part No.:
SISD5300DN-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

198A

Maximum Drain Source Voltage Vds

30V

Package Type

1212-F

Series

SISD

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00087Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

36.2nC

Maximum Power Dissipation Pd

57W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

3.3mm

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

Related links