N-Channel MOSFET, 5.2 A, 55 V, 3-Pin SOT-223 Infineon BSP603S2LHUMA1

RS Stock No.:: 462-2935
Mfr. Part No.:: BSP603S2LHUMA1
Manufacturer:: Infineon

N-Channel MOSFET, 5.2 A, 55 V, 3-Pin SOT-223 Infineon BSP603S2LHUMA1

Bulk discount available

Subtotal (1 pack of 10 units)**

€14.30

(exc. VAT)

€17.60

(inc. VAT)

Temporarily out of stock - back order for despatch when stock is available*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Pack**
10 - 40	€1.43	€14.30
50 - 90	€1.358	€13.58
100 - 240	€1.223	€12.23
250 - 490	€1.101	€11.01
500 +	€1.047	€10.47

**price indicative

RS Stock No.:: 462-2935
Mfr. Part No.:: BSP603S2LHUMA1
Manufacturer:: Infineon

Infineon OptiMOS™ Series MOSFET, 5.2A Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP603S2LHUMA1

This N-channel MOSFET is engineered for efficient performance across various electrical applications. With a maximum continuous drain current of 5.2A and a maximum drain-source voltage of 55V, it provides robust capabilities for power management and control, making it an important component for professionals in automotive and electronics industries.

Features & Benefits

• Low RDS(on) minimises power loss during operation
• Maximum gate threshold voltage improves switching efficiency
• Surface mount design facilitates integration into compact PCBs
• AEC-qualified to meet stringent automotive standards
• High-temperature operation rated up to +150°C for durability

Applications

• Power management in automotive electronics
• Suitable for DC-DC converters in electric vehicles
• Utilised in motor control for robotics and automation
• Load switch in consumer electronics

What is the typical gate charge at 10V?

The typical gate charge is 31nC, optimising switching performance at 10V.

Is this suitable for applications in high-temperature environments?

Yes, it operates reliably at temperatures up to +150°C, ideal for challenging conditions.

How does this component handle significant current loads?

With a maximum continuous drain current of 5.2A, it effectively manages high loads while maintaining performance.

Can this MOSFET effectively reduce energy losses?

Yes, the low RDS(on) feature minimises on-state resistance, aiding in reducing energy losses during operation.

Does this product adhere to environmental standards?

Yes, it is RoHS compliant, ensuring it meets environmental safety standards for electronic components.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	5.2 A
Maximum Drain Source Voltage	55 V
Series	OptiMOS™
Package Type	SOT-223
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	33 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	1.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	31 nC @ 10 V
Width	3.5mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Length	6.5mm
Forward Diode Voltage	1.1V
Automotive Standard	AEC
Minimum Operating Temperature	-55 °C
Height	1.6mm