P-Channel MOSFET, 23 A, 100 V, 3-Pin TO-247AC Infineon IRFP9140NPBF

RS Stock No.:: 542-9816
Distrelec Article No.:: 302-84-056
Mfr. Part No.:: IRFP9140NPBF
Manufacturer:: Infineon

P-Channel MOSFET, 23 A, 100 V, 3-Pin TO-247AC Infineon IRFP9140NPBF

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€1.94

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Units	Per unit
1 - 9	€1.94
10 - 49	€1.84
50 - 99	€1.80
100 - 249	€1.68
250 +	€1.55

**price indicative

RS Stock No.:: 542-9816
Distrelec Article No.:: 302-84-056
Mfr. Part No.:: IRFP9140NPBF
Manufacturer:: Infineon

P-Channel Power MOSFET 100V to 150V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 23A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRFP9140NPBF

This high-power MOSFET is designed for efficient switching performance in various applications. It is ideal for power electronics, combining a high continuous drain current capability with low resistance, facilitating dependable and precise control in automation and electrical systems across multiple operational environments.

Features & Benefits

• P-Channel configuration allows for flexible circuit designs
• Maximum continuous drain current of 23A
• 100V drain-source voltage rating enhances safety
• Low RDS(on) of 117mΩ reduces power loss
• Suitable for enhancement mode applications ensuring stable performance

Applications

• Utilised in motor control for improved efficiency
• Ideal for energy management systems that require high reliability
• Common in power supply circuits for robust operation
• Employed in switching regulators for effective power conversion
• Suitable for industrial automation systems requiring dependable switching

What is the maximum gate threshold voltage for the device?

It has a maximum gate threshold voltage of 4V, suitable for diverse circuit designs.

How does the RDS(on) value impact performance?

The low RDS(on) value of 117mΩ minimises energy losses, enhancing efficiency and thermal management in applications.

What types of circuits can benefit from this MOSFET?

It is appropriate for both linear and switching circuits, making it versatile for varied electronic applications.

What is the typical gate charge required for operation?

The MOSFET requires a typical gate charge of 97nC at a gate-source voltage of 10V for optimal performance.

What are the implications of the maximum operating temperature?

With a maximum operating temperature of +175°C, this device is suitable for high-temperature environments, improving its reliability in challenging conditions.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	23 A
Maximum Drain Source Voltage	100 V
Series	HEXFET
Package Type	TO-247AC
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	117 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	140 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	97 nC @ 10 V
Width	5.3mm
Length	15.9mm
Height	20.3mm
Forward Diode Voltage	1.3V
Minimum Operating Temperature	-55 °C