Essential and Operational Technologies

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Units	Per unit	Per Tube**
50 - 50	€0.538	€26.90
100 - 200	€0.511	€25.55
250 - 450	€0.49	€24.50
500 - 1200	€0.458	€22.90
1250 +	€0.431	€21.55

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	14 A
	Maximum Drain Source Voltage	100 V
	Series	HEXFET
	Package Type	TO-220AB
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	200 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	79 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	58 nC @ 10 V
	Number of Elements per Chip	1
	Transistor Material	Si
	Maximum Operating Temperature	+175 °C
	Height	8.77mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 14 A
	Maximum Drain Source Voltage 100 V
	Series HEXFET
	Package Type TO-220AB
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 200 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 79 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 58 nC @ 10 V
	Number of Elements per Chip 1
	Transistor Material Si
	Maximum Operating Temperature +175 °C
	Height 8.77mm
	Minimum Operating Temperature -55 °C

Infineon HEXFET P-Channel MOSFET, 14 A, 100 V, 3-Pin TO-220AB IRF9530NPBF

P-Channel Power MOSFET 100V to 150V, Infineon

Infineon HEXFET Series MOSFET, 14A Maximum Continuous Drain Current, 79W Maximum Power Dissipation - IRF9530NPBF

Features & Benefits

Applications

How can the operating temperature range affect usage?

What are the implications of the maximum power dissipation specification?

Can it be used in parallel configurations for increased current capacity?

What precautions should be taken during installation?

Related links