Essential and Operational Technologies

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Units	Per unit	Per Pack**
5 - 45	€4.20	€21.00
50 - 95	€3.622	€18.11
100 +	€3.14	€15.70

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	31 A
	Maximum Drain Source Voltage	200 V
	Series	QFET
	Package Type	D2PAK (TO-263)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	75 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	3.13 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Length	10.67mm
	Transistor Material	Si
	Width	9.65mm
	Typical Gate Charge @ Vgs	55 nC @ 5 V
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	1
	Height	4.83mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 31 A
	Maximum Drain Source Voltage 200 V
	Series QFET
	Package Type D2PAK (TO-263)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 75 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 3.13 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Length 10.67mm
	Transistor Material Si
	Width 9.65mm
	Typical Gate Charge @ Vgs 55 nC @ 5 V
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 1
	Height 4.83mm
	Minimum Operating Temperature -55 °C

onsemi QFET N-Channel MOSFET, 31 A, 200 V, 3-Pin D2PAK FQB34N20LTM

QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor

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