onsemi NDS7002A Type N-Channel MOSFET, 280 mA, 60 V Enhancement, 3-Pin SOT-23 NDS7002A

RS Stock No.:: 671-1093
Mfr. Part No.:: NDS7002A
Manufacturer:: onsemi

onsemi NDS7002A Type N-Channel MOSFET, 280 mA, 60 V Enhancement, 3-Pin SOT-23 NDS7002A

Bulk discount available

Subtotal (1 pack of 10 units)*

€1.39

(exc. VAT)

€1.71

(inc. VAT)

In Stock

Plus 40 unit(s) shipping from 05 January 2026
Plus 52,160 unit(s) shipping from 12 January 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
10 - 90	€0.139	€1.39
100 - 240	€0.12	€1.20
250 - 490	€0.104	€1.04
500 - 990	€0.091	€0.91
1000 +	€0.083	€0.83

*price indicative

RS Stock No.:: 671-1093
Mfr. Part No.:: NDS7002A
Manufacturer:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	280mA
	Maximum Drain Source Voltage Vds	60V
	Series	NDS7002A
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	2Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	1.2nC
	Minimum Operating Temperature	-65°C
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.88V
	Maximum Power Dissipation Pd	300mW
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	2.92mm
	Height	0.93mm
	Width	1.3 mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 280mA
	Maximum Drain Source Voltage Vds 60V
	Series NDS7002A
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 2Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 1.2nC
	Minimum Operating Temperature -65°C
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.88V
	Maximum Power Dissipation Pd 300mW
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 2.92mm
	Height 0.93mm
	Width 1.3 mm
	Automotive Standard No

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi NDS7002A Type N-Channel MOSFET, 280 mA, 60 V Enhancement, 3-Pin SOT-23 NDS7002A

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

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