Infineon SIPMOS Type N-Channel MOSFET, 280 mA, 60 V Enhancement, 3-Pin SC-70
- RS Stock No.:
- 826-9282
- Mfr. Part No.:
- BSS138WH6433XTMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 reel of 500 units)*
€44.00
(exc. VAT)
€54.00
(inc. VAT)
Temporarily out of stock
- Shipping from 04 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 500 - 500 | €0.088 | €44.00 |
| 1000 - 2000 | €0.062 | €31.00 |
| 2500 - 4500 | €0.058 | €29.00 |
| 5000 - 12000 | €0.054 | €27.00 |
| 12500 + | €0.044 | €22.00 |
*price indicative
- RS Stock No.:
- 826-9282
- Mfr. Part No.:
- BSS138WH6433XTMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 280mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SC-70 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1nC | |
| Forward Voltage Vf | 0.85V | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 2mm | |
| Standards/Approvals | No | |
| Width | 1.25 mm | |
| Height | 0.8mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 280mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SC-70 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1nC | ||
Forward Voltage Vf 0.85V | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 2mm | ||
Standards/Approvals No | ||
Width 1.25 mm | ||
Height 0.8mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SC-70 BSS138WH6433XTMA1
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SC-70
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SC-70 BSS84PWH6327XTSA1
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SC-59
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SC-59 BSR315PH6327XTSA1
- onsemi NDS7002A Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Microchip TN2106 Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 TN2106K1-G
- Microchip TN2106 Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23