Infineon OptiMOS™ 3 N-Channel MOSFET, 100 A, 150 V, 3-Pin D2PAK IPB072N15N3GATMA1

RS Stock No.:: 752-8340
Mfr. Part No.:: IPB072N15N3GATMA1
Manufacturer:: Infineon

Infineon OptiMOS™ 3 N-Channel MOSFET, 100 A, 150 V, 3-Pin D2PAK IPB072N15N3GATMA1

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€5.09

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€6.26

(inc. VAT)

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RS Stock No.:: 752-8340
Mfr. Part No.:: IPB072N15N3GATMA1
Manufacturer:: Infineon

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	100 A
Maximum Drain Source Voltage	150 V
Series	OptiMOS™ 3
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	7.7 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Length	10.31mm
Number of Elements per Chip	1
Width	9.45mm
Typical Gate Charge @ Vgs	70 nC @ 10 V
Height	4.57mm
Minimum Operating Temperature	-55 °C

Infineon OptiMOS™ 3 N-Channel MOSFET, 100 A, 150 V, 3-Pin D2PAK IPB072N15N3GATMA1

Infineon OptiMOS™3 Power MOSFETs, 100V and over

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