Dual N-Channel MOSFET, 3.8 A, 20 V, 6-Pin MicroFET Thin onsemi FDME1024NZT
- RS Stock No.:
- 759-9576
- Mfr. Part No.:
- FDME1024NZT
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)**
€4.33
(exc. VAT)
€5.32
(inc. VAT)
Temporarily out of stock - back order for despatch when stock is available*
* Delivery dates may change based on your chosen quantity and delivery address.
Units | Per unit | Per Pack** |
---|---|---|
5 - 5 | €0.866 | €4.33 |
10 - 95 | €0.708 | €3.54 |
100 - 495 | €0.496 | €2.48 |
500 - 995 | €0.432 | €2.16 |
1000 + | €0.364 | €1.82 |
**price indicative
- RS Stock No.:
- 759-9576
- Mfr. Part No.:
- FDME1024NZT
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 3.8 A | |
Maximum Drain Source Voltage | 20 V | |
Series | PowerTrench | |
Package Type | MicroFET Thin | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Drain Source Resistance | 160 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 0.4V | |
Maximum Power Dissipation | 1.4 W | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | -8 V, +8 V | |
Maximum Operating Temperature | +150 °C | |
Length | 1.6mm | |
Typical Gate Charge @ Vgs | 3 nC @ 4.5 V | |
Transistor Material | Si | |
Number of Elements per Chip | 2 | |
Width | 1.6mm | |
Minimum Operating Temperature | -55 °C | |
Height | 0.5mm | |
Select all | ||
---|---|---|
Manufacturer onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.8 A | ||
Maximum Drain Source Voltage 20 V | ||
Series PowerTrench | ||
Package Type MicroFET Thin | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 160 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 1.4 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Maximum Operating Temperature +150 °C | ||
Length 1.6mm | ||
Typical Gate Charge @ Vgs 3 nC @ 4.5 V | ||
Transistor Material Si | ||
Number of Elements per Chip 2 | ||
Width 1.6mm | ||
Minimum Operating Temperature -55 °C | ||
Height 0.5mm | ||