N-Channel MOSFET, 55 A, 60 V, 8-Pin MicroFET 2 x 2 onsemi FDMC86520L
- RS Stock No.:
- 760-5882
- Mfr. Part No.:
- FDMC86520L
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 pack of 2 units)**
€4.75
(exc. VAT)
€5.84
(inc. VAT)
80 In stock for delivery within 2 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
Units | Per unit | Per Pack** |
|---|---|---|
| 2 - 8 | €2.375 | €4.75 |
| 10 - 98 | €2.015 | €4.03 |
| 100 - 248 | €1.565 | €3.13 |
| 250 - 498 | €1.51 | €3.02 |
| 500 + | €1.33 | €2.66 |
**price indicative
- RS Stock No.:
- 760-5882
- Mfr. Part No.:
- FDMC86520L
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 55 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | PowerTrench | |
| Package Type | MicroFET 2 x 2 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 11.7 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 40 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 3.3mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 45 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 3.3mm | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.75mm | |
Select all | ||
|---|---|---|
Manufacturer onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 55 A | ||
Maximum Drain Source Voltage 60 V | ||
Series PowerTrench | ||
Package Type MicroFET 2 x 2 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 11.7 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 40 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 3.3mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 45 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Width 3.3mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 0.75mm | ||
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