Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3

RS Stock No.:: 787-8995
Distrelec Article No.:: 304-02-278
Mfr. Part No.:: SI9945BDY-T1-GE3
Manufacturer:: Vishay

Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3

Bulk discount available

Price Each (In a Pack of 10)

€0.645

(exc. VAT)

€0.793

(inc. VAT)

150 In stock for delivery within 2 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Pack**
10 - 90	€0.645	€6.45
100 - 240	€0.606	€6.06
250 - 490	€0.549	€5.49
500 - 990	€0.516	€5.16
1000 +	€0.485	€4.85

**price indicative

RS Stock No.:: 787-8995
Distrelec Article No.:: 304-02-278
Mfr. Part No.:: SI9945BDY-T1-GE3
Manufacturer:: Vishay

Si9945BDY, Dual N-Channel 60V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	5.3 A
Maximum Drain Source Voltage	60 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	72 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	3.1 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Width	4mm
Number of Elements per Chip	2
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	13 nC @ 10 V
Length	5mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	1.5mm

Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3

Dual N-Channel MOSFET, Vishay Semiconductor

Related links