Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3

RS Stock No.:: 919-4189
Mfr. Part No.:: SI9945BDY-T1-GE3
Manufacturer:: Vishay

Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3

Price Each (On a Reel of 2500)**

€0.345

(exc. VAT)

€0.424

(inc. VAT)

5000 In stock for delivery within 2 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Reel**
2500 +	€0.345	€862.50

**price indicative

RS Stock No.:: 919-4189
Mfr. Part No.:: SI9945BDY-T1-GE3
Manufacturer:: Vishay

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	5.3 A
Maximum Drain Source Voltage	60 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	72 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	3.1 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Length	5mm
Typical Gate Charge @ Vgs	13 nC @ 10 V
Number of Elements per Chip	2
Maximum Operating Temperature	+150 °C
Width	4mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	1.5mm

Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3

Dual N-Channel MOSFET, Vishay Semiconductor

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