Vishay Isolated N-Channel MOSFET, 5.3 A, 60 V Enhancement, 8-Pin SOIC SI9945BDY-T1-GE3
- RS Stock No.:
- 919-4189
- Mfr. Part No.:
- SI9945BDY-T1-GE3
- Manufacturer:
- Vishay
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 919-4189
- Mfr. Part No.:
- SI9945BDY-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Transistor Configuration | Isolated | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 5.3 A | |
| Maximum Drain Source Voltage (Vds) | 60 V | |
| Channel Mode | Enhancement | |
| Pin Count | 8 | |
| Package Type | SOIC | |
| Height | 1.5 mm | |
| Length | 5 mm | |
| Maximum Drain Source Resistance (Rds) | 72 mΩ | |
| Maximum Gate Source Voltage (Vgs) | 20 V, -20 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 3.1 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface | |
| Width | 4 mm | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Transistor Configuration Isolated | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 5.3 A | ||
Maximum Drain Source Voltage (Vds) 60 V | ||
Channel Mode Enhancement | ||
Pin Count 8 | ||
Package Type SOIC | ||
Height 1.5 mm | ||
Length 5 mm | ||
Maximum Drain Source Resistance (Rds) 72 mΩ | ||
Maximum Gate Source Voltage (Vgs) 20 V, -20 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 3.1 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface | ||
Width 4 mm | ||
- COO (Country of Origin):
- TW
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